To improve its reliability, each memory cell is designed to have double floating gates to store info

中文解释

在对SRAM发展至今包括传统六管单元在内的几款比较成熟的基本存储单元做了详细的介绍和分析之后，提出了本论文设计的亚阈值低功耗九管存储单元。

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